All Transistors. BU104DP Datasheet

 

BU104DP Datasheet and Replacement


   Type Designator: BU104DP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO220
 

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BU104DP Datasheet (PDF)

 8.1. Size:203K  inchange semiconductor
 bu104d.pdf pdf_icon

BU104DP

isc Silicon NPN Power Transistor BU104DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTs.ABSOLUTE MAXIMUM R

 9.1. Size:207K  inchange semiconductor
 bu104.pdf pdf_icon

BU104DP

isc Silicon NPN Power Transistor BU104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflexion output stage of B/WTV receivers.ABSOLUTE MAXIMUM RATING

Datasheet: BU1008ADF , BU1008AF , BU100A , BU102 , BU103 , BU103A , BU104 , BU104D , BD135 , BU104P , BU105 , BU105-02 , BU106 , BU107 , BU108 , BU1085 , BU109 .

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