All Transistors. BU105-02 Datasheet

 

BU105-02 Datasheet and Replacement


   Type Designator: BU105-02
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BU105-02 Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
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BU105-02

isc Silicon NPN Power Transistor BU105DESCRIPTIONHigh Voltage-V = 1300V(Min.)CERCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line operated B&W(19 and 20 inch 110deflection circuits ) or color ( 11 and 14 inch 90 deflectio

Datasheet: BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P , BU105 , 2SD2499 , BU106 , BU107 , BU108 , BU1085 , BU109 , BU109D , BU109DP , BU109NP .

History: RT1N231S

Keywords - BU105-02 transistor datasheet

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