BU105-02 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU105-02
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 115 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BU105-02 Transistor Equivalent Substitute - Cross-Reference Search
BU105-02 Datasheet (PDF)
9.1. Size:207K inchange semiconductor
bu105.pdf
bu105.pdf
isc Silicon NPN Power Transistor BU105DESCRIPTIONHigh Voltage-V = 1300V(Min.)CERCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line operated B&W(19 and 20 inch 110deflection circuits ) or color ( 11 and 14 inch 90 deflectio
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
