BU105-02 PDF and Equivalents Search

 

BU105-02 PDF Specs and Replacement


   Type Designator: BU105-02
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics


   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BU105-02 PDF detailed specifications

 9.1. Size:207K  inchange semiconductor
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BU105-02

isc Silicon NPN Power Transistor BU105 DESCRIPTION High Voltage-V = 1300V(Min.) CER Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line operated B&W(19 and 20 inch 110 deflection circuits ) or color ( 11 and 14 inch 90 deflectio... See More ⇒

Detailed specifications: BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P , BU105 , TIP31 , BU106 , BU107 , BU108 , BU1085 , BU109 , BU109D , BU109DP , BU109NP .

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