All Transistors. BU1085 Datasheet

 

BU1085 Datasheet and Replacement


   Type Designator: BU1085
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: TO3
 

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BU1085 Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
 bu108.pdf pdf_icon

BU1085

isc Silicon NPN Power Transistor BU108DESCRIPTIONHigh VoltageHigh Switching SpeedCollector Current- I = 5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage CRT scanning applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Collect

Datasheet: BU104D , BU104DP , BU104P , BU105 , BU105-02 , BU106 , BU107 , BU108 , 2SC2625 , BU109 , BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 .

History: 2SA1417S-TD-E | C426 | 2SC307 | 2N3201 | BEL381K | 2SD1224 | 2SC1181

Keywords - BU1085 transistor datasheet

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