2N3212 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3212
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 14 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO37
Datasheet: 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 , 2SD313 , 2N3213 , 2N3214 , 2N3215 , 2N3216 , 2N3217 , 2N3218 , 2N3219 , 2N322 .
![2N3212](https://alltransistors.com/images/us.png)
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