BU110 Specs and Replacement

Type Designator: BU110

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

 BU110 Substitution

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BU110 datasheet

 ..1. Size:202K  inchange semiconductor

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BU110

isc Silicon NPN Power Transistor BU110 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Collector-Emitter Sustaining Voltage- V = 150 V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of TVs and C... See More ⇒

Detailed specifications: BU107, BU108, BU1085, BU109, BU109D, BU109DP, BU109NP, BU109P, 2SC945, BU111, BU112, BU113, BU113S, BU114, BU115, BU116, BU117

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