All Transistors. BU110 Datasheet

 

BU110 Datasheet and Replacement


   Type Designator: BU110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 330 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3
 

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BU110 Datasheet (PDF)

 ..1. Size:202K  inchange semiconductor
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BU110

isc Silicon NPN Power Transistor BU110DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC

Datasheet: BU107 , BU108 , BU1085 , BU109 , BU109D , BU109DP , BU109NP , BU109P , 2SC2655 , BU111 , BU112 , BU113 , BU113S , BU114 , BU115 , BU116 , BU117 .

History: KRA314E

Keywords - BU110 transistor datasheet

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