BU111 Specs and Replacement

Type Designator: BU111

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

 BU111 Substitution

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BU111 datasheet

 ..1. Size:207K  inchange semiconductor

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BU111

isc Silicon NPN Power Transistor BU111 DESCRIPTION Collector-Emitter Sustaining Voltag- V = 300V(Min) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

Detailed specifications: BU108, BU1085, BU109, BU109D, BU109DP, BU109NP, BU109P, BU110, A1013, BU112, BU113, BU113S, BU114, BU115, BU116, BU117, BU118

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