BU111 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU111
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3
BU111 Transistor Equivalent Substitute - Cross-Reference Search
BU111 Datasheet (PDF)
..1. Size:207K inchange semiconductor
bu111.pdf
bu111.pdf
isc Silicon NPN Power Transistor BU111DESCRIPTIONCollector-Emitter Sustaining Voltag-: V = 300V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV receivers chopper supplies.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2S163
