All Transistors. BU112 Datasheet

 

BU112 Datasheet and Replacement


   Type Designator: BU112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BU112 Datasheet (PDF)

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BU112

isc Silicon NPN Power Transistors BU112DESCRIPTIONCollector-Emitter Voltage-:V = 550V(Min.)CEX(SUS)Collector Current- I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for deflection circuits applications in color TVreceivers fitted with 90 kinescope.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1624-U | AC122W | LMBT2907LT1G | TFNA14 | 9013I | MPS2484R | 2SD1720

Keywords - BU112 transistor datasheet

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