BU112 Specs and Replacement

Type Designator: BU112

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 550 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

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BU112 datasheet

 ..1. Size:206K  inchange semiconductor

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BU112

isc Silicon NPN Power Transistors BU112 DESCRIPTION Collector-Emitter Voltage- V = 550V(Min.) CEX(SUS) Collector Current- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for deflection circuits applications in color TV receivers fitted with 90 kinescope. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

Detailed specifications: BU1085, BU109, BU109D, BU109DP, BU109NP, BU109P, BU110, BU111, 2SB817, BU113, BU113S, BU114, BU115, BU116, BU117, BU118, BU120

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