All Transistors. BU112 Datasheet

 

BU112 Datasheet and Replacement


   Type Designator: BU112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BU112 Datasheet (PDF)

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BU112

isc Silicon NPN Power Transistors BU112DESCRIPTIONCollector-Emitter Voltage-:V = 550V(Min.)CEX(SUS)Collector Current- I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for deflection circuits applications in color TVreceivers fitted with 90 kinescope.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: BU1085 , BU109 , BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , 2N4401 , BU113 , BU113S , BU114 , BU115 , BU116 , BU117 , BU118 , BU120 .

History: MPS2484R

Keywords - BU112 transistor datasheet

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