All Transistors. BU113 Datasheet

 

BU113 Datasheet and Replacement


   Type Designator: BU113
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 63 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 275 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BU113 Datasheet (PDF)

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BU113

isc Silicon NPN Power Transistors BU113DESCRIPTIONCollector-Emitter Voltage-:V = 700V(Min.)CEX(SUS)Collector Current- I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output state ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: BU109 , BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 , 2SB817 , BU113S , BU114 , BU115 , BU116 , BU117 , BU118 , BU120 , BU121 .

History: 2SC3944A | 2SC1740 | CSD1506P | MMBT404 | 2SD1609 | 40306 | MMBT4354

Keywords - BU113 transistor datasheet

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