BU113S Specs and Replacement

Type Designator: BU113S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

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BU113S datasheet

 9.1. Size:206K  inchange semiconductor

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BU113S

isc Silicon NPN Power Transistors BU113 DESCRIPTION Collector-Emitter Voltage- V = 700V(Min.) CEX(SUS) Collector Current- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output state of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

Detailed specifications: BU109D, BU109DP, BU109NP, BU109P, BU110, BU111, BU112, BU113, 2SC2655, BU114, BU115, BU116, BU117, BU118, BU120, BU121, BU122

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