All Transistors. BU113S Datasheet

 

BU113S Datasheet and Replacement


   Type Designator: BU113S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

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BU113S Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
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BU113S

isc Silicon NPN Power Transistors BU113DESCRIPTIONCollector-Emitter Voltage-:V = 700V(Min.)CEX(SUS)Collector Current- I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output state ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 , BU113 , 8550 , BU114 , BU115 , BU116 , BU117 , BU118 , BU120 , BU121 , BU122 .

History: BFQ88 | BFQ70 | FV2484

Keywords - BU113S transistor datasheet

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