BU114 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU114
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3
BU114 Transistor Equivalent Substitute - Cross-Reference Search
BU114 Datasheet (PDF)
..1. Size:200K inchange semiconductor
bu114.pdf
bu114.pdf
isc Silicon NPN Power Transistor BU114DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FZT857
