All Transistors. BU114 Datasheet

 

BU114 Datasheet and Replacement


   Type Designator: BU114
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
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BU114 Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
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BU114

isc Silicon NPN Power Transistor BU114DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SD2137A

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