BU114 Specs and Replacement

Type Designator: BU114

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

 BU114 Substitution

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BU114 datasheet

 ..1. Size:200K  inchange semiconductor

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BU114

isc Silicon NPN Power Transistor BU114 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Collector-Emitter Sustaining Voltage- V = 150 V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of TVs and C... See More ⇒

Detailed specifications: BU109DP, BU109NP, BU109P, BU110, BU111, BU112, BU113, BU113S, D880, BU115, BU116, BU117, BU118, BU120, BU121, BU122, BU123

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