All Transistors. BU114 Datasheet

 

BU114 Datasheet and Replacement


   Type Designator: BU114
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

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BU114 Datasheet (PDF)

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BU114

isc Silicon NPN Power Transistor BU114DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC

Datasheet: BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 , BU113 , BU113S , 2SD669A , BU115 , BU116 , BU117 , BU118 , BU120 , BU121 , BU122 , BU123 .

History: 2SA2199

Keywords - BU114 transistor datasheet

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