BU118 Specs and Replacement

Type Designator: BU118

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 17 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 BU118 Substitution

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BU118 datasheet

 ..1. Size:424K  cn sptech

 bu118.pdf pdf_icon

BU118

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU118 DESCRIPTION Excellent Safe Operating Area V 200V CE I 7A CM Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒

 ..2. Size:268K  inchange semiconductor

 bu118.pdf pdf_icon

BU118

isc Silicon NPN Power Transistor BU118 DESCRIPTION Excellent Safe Operating Area V 200V CE I 7A CM Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V THERMAL CHARACTER... See More ⇒

Detailed specifications: BU111, BU112, BU113, BU113S, BU114, BU115, BU116, BU117, 2222A, BU120, BU121, BU122, BU123, BU124, BU124A, BU125, BU125S

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