BU120 Specs and Replacement
Type Designator: BU120
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO3
BU120 Substitution
- BJT ⓘ Cross-Reference Search
BU120 datasheet
isc Silicon NPN Power Transistors BU120 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: BU112, BU113, BU113S, BU114, BU115, BU116, BU117, BU118, 2SC5198, BU121, BU122, BU123, BU124, BU124A, BU125, BU125S, BU126
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