BU126S Specs and Replacement

Type Designator: BU126S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BU126S datasheet

 9.1. Size:204K  inchange semiconductor

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BU126S

INCHANGE Semiconductor isc Silicon NPN Power Transistors BU126 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min.) CEO(SUS) Collector Current- I = 3A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in regulator, inverter, switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

Detailed specifications: BU122, BU123, BU124, BU124A, BU125, BU125S, BU126, BU126A, 2SD669, BU126T, BU127, BU128, BU129, BU130, BU131, BU132, BU133

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