BU128 Specs and Replacement

Type Designator: BU128

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

 BU128 Substitution

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BU128 datasheet

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BU128

isc Silicon NPN Power Transistor BU128 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applicat... See More ⇒

Detailed specifications: BU124A, BU125, BU125S, BU126, BU126A, BU126S, BU126T, BU127, TIP142, BU129, BU130, BU131, BU132, BU133, BU134, BU135, BU136

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