BU132 Specs and Replacement

Type Designator: BU132

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 BU132 Substitution

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BU132 datasheet

 ..1. Size:201K  inchange semiconductor

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BU132

isc Silicon NPN Power Transistor BU132 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 0.5A CE(sat C Collector-Emitter Sustaining Voltage- V = 600V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applic... See More ⇒

Detailed specifications: BU126A, BU126S, BU126T, BU127, BU128, BU129, BU130, BU131, 431, BU133, BU134, BU135, BU136, BU137, BU137A, BU138, BU139

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