BU209 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU209
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 115 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 2.25
Noise Figure, dB: -
Package: TO3
BU209 Transistor Equivalent Substitute - Cross-Reference Search
BU209 Datasheet (PDF)
bu209.pdf
isc Silicon NPN Power Transistor BU209DESCRIPTIONHigh Reverse VoltageHigh Peak PowerCollector Current- I = 4ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Vo
bu209a.pdf
isc Silicon NPN Power Transistor BU209ADESCRIPTIONHigh Voltage CapabilityHigh Peak PowerHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: GD110
