All Transistors. BU212 Datasheet

 

BU212 Datasheet and Replacement


   Type Designator: BU212
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

 BU212 Transistor Equivalent Substitute - Cross-Reference Search

   

BU212 Datasheet (PDF)

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BU212

isc Silicon NPN Power Transistor BU212 DESCRIPTION High Collector-Base Breakdown Voltage- V = 750V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

Datasheet: BU208 , BU208A , BU208B , BU208D , BU209 , BU209A , BU210 , BU211 , TIP31C , BU213 , BU214 , BU215 , BU216 , BU217 , BU218 , BU221 , BU222 .

History: TP3710 | 2SB775 | IMH11AFRA | CHEMA7GP | 2SC1861 | CHEMB9GP | BU2522DF

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