All Transistors. BU212 Datasheet

 

BU212 Datasheet and Replacement


   Type Designator: BU212
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

 BU212 Substitution

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BU212 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
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BU212

isc Silicon NPN Power Transistor BU212DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 750V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATI

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DTS105

Keywords - BU212 transistor datasheet

 BU212 cross reference
 BU212 equivalent finder
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