BU212 Datasheet. Specs and Replacement

Type Designator: BU212  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

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BU212 datasheet

 ..1. Size:204K  inchange semiconductor

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BU212

isc Silicon NPN Power Transistor BU212 DESCRIPTION High Collector-Base Breakdown Voltage- V = 750V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: BU208, BU208A, BU208B, BU208D, BU209, BU209A, BU210, BU211, TIP31C, BU213, BU214, BU215, BU216, BU217, BU218, BU221, BU222

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