BU222 Specs and Replacement

Type Designator: BU222

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: -

Package: TO3

 BU222 Substitution

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BU222 datasheet

 ..1. Size:205K  inchange semiconductor

 bu222.pdf pdf_icon

BU222

isc Silicon NPN Power Transistor BU222 DESCRIPTION High Collector-Base Breakdown Voltage- V = 450V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 0.1. Size:205K  inchange semiconductor

 bu222a.pdf pdf_icon

BU222

isc Silicon NPN Power Transistor BU222A DESCRIPTION High Collector-Base Breakdown Voltage- V = 525V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

Detailed specifications: BU212, BU213, BU214, BU215, BU216, BU217, BU218, BU221, A733, BU222A, BU223, BU223A, BU225, BU226, BU2506DF, BU2506DX, BU2507AF

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