BU222 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU222
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: TO3
BU222 Transistor Equivalent Substitute - Cross-Reference Search
BU222 Datasheet (PDF)
bu222.pdf
isc Silicon NPN Power Transistor BU222DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 450V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
bu222a.pdf
isc Silicon NPN Power Transistor BU222ADESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 525V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
