BU415B Specs and Replacement

Type Designator: BU415B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO3

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BU415B datasheet

 ..1. Size:204K  inchange semiconductor

 bu415b.pdf pdf_icon

BU415B

isc Silicon NPN Power Transistor BU415B DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

 9.1. Size:200K  inchange semiconductor

 bu415.pdf pdf_icon

BU415B

isc Silicon NPN Power Transistor BU415 DESCRIPTION Collector-Emitter Sustaining Voltag- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle... See More ⇒

Detailed specifications: BU408D, BU409, BU410, BU411, BU412, BU413, BU414, BU414B, TIP41, BU426, BU426A, BU426AF, BU426F, BU433, BU4508AF, BU4508AX, BU4508AZ

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