2N3229 Datasheet and Replacement
Type Designator: 2N3229
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 105 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO62
2N3229 Substitution
2N3229 Datasheet (PDF)
2n3226.pdf

isc Silicon NPN Power Transistor 2N3226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for power amplifier and switching circuitsapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
Datasheet: 2N3220 , 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 , 2SC2383Y , 2N323 , 2N3230 , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 , 2N3236 .
Keywords - 2N3229 transistor datasheet
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