BU536 Specs and Replacement

Type Designator: BU536

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1100 V

Maximum Collector-Emitter Voltage |Vce|: 480 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5.5

Noise Figure, dB: -

Package: TO3

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BU536 datasheet

 ..1. Size:205K  inchange semiconductor

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BU536

isc Silicon NPN Power Transistor BU536 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 480V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: BU522B, BU526, BU526A, BU526A-4, BU526A-5, BU526A-6, BU526A-7, BU526A-8, 8550, BU546, BU603, BU606, BU606D, BU607, BU607D, BU608, BU608D

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