All Transistors. BU536 Datasheet

 

BU536 Datasheet and Replacement


   Type Designator: BU536
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 480 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.5
   Noise Figure, dB: -
   Package: TO3
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BU536 Datasheet (PDF)

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BU536

isc Silicon NPN Power Transistor BU536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 480V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: H8050 | FMMTA06 | DDTA124GUA | KT838A | AF280V | 2SD1000L | 2SD189

Keywords - BU536 transistor datasheet

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