All Transistors. BU536 Datasheet

 

BU536 Datasheet and Replacement


   Type Designator: BU536
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 480 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.5
   Noise Figure, dB: -
   Package: TO3
 

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BU536 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
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BU536

isc Silicon NPN Power Transistor BU536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 480V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: BU522B , BU526 , BU526A , BU526A-4 , BU526A-5 , BU526A-6 , BU526A-7 , BU526A-8 , D209L , BU546 , BU603 , BU606 , BU606D , BU607 , BU607D , BU608 , BU608D .

History: BDY13-10 | NR461FS | MRF1090MB | GES6004 | KT210B | 2SC2298 | KTA1225D

Keywords - BU536 transistor datasheet

 BU536 cross reference
 BU536 equivalent finder
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