All Transistors. BU536 Datasheet

 

BU536 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU536
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 480 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.5
   Noise Figure, dB: -
   Package: TO3

 BU536 Transistor Equivalent Substitute - Cross-Reference Search

   

BU536 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
 bu536.pdf

BU536 BU536

isc Silicon NPN Power Transistor BU536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 480V(Min.)(BR)CEOHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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