BU546 Datasheet. Specs and Replacement
Type Designator: BU546 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1350 V
Maximum Collector-Emitter Voltage |Vce|: 550 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
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BU546 datasheet
isc Silicon NPN Power Transistor BU546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 550V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
Detailed specifications: BU526, BU526A, BU526A-4, BU526A-5, BU526A-6, BU526A-7, BU526A-8, BU536, 9014, BU603, BU606, BU606D, BU607, BU607D, BU608, BU608D, BU626
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BJT Parameters and How They Relate
History: RN1966FE | SRC1219S | BDX50 | KRC824E | PBRN123YK | KT639J | 2SC3973A
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