BU607 Specs and Replacement

Type Designator: BU607

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 BU607 Substitution

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BU607 datasheet

 ..1. Size:205K  inchange semiconductor

 bu607.pdf pdf_icon

BU607

isc Silicon NPN Power Transistor BU607 DESCRIPTION High Voltage V = 330V(Min) CEV Fast Switching Speed- t = 0.75 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM... See More ⇒

 0.1. Size:207K  inchange semiconductor

 bu607d.pdf pdf_icon

BU607

isc Silicon NPN Power Transistor BU607D DESCRIPTION High Voltage V = 330V(Min) CEV Fast Switching Speed- t = 0.75 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXI... See More ⇒

Detailed specifications: BU526A-6, BU526A-7, BU526A-8, BU536, BU546, BU603, BU606, BU606D, A1013, BU607D, BU608, BU608D, BU626, BU626A, BU705, BU705D, BU705DF

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