BU607 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU607
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BU607 Transistor Equivalent Substitute - Cross-Reference Search
BU607 Datasheet (PDF)
bu607.pdf
isc Silicon NPN Power Transistor BU607DESCRIPTIONHigh Voltage: V = 330V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIM
bu607d.pdf
isc Silicon NPN Power Transistor BU607DDESCRIPTIONHigh Voltage: V = 330V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
