BU926 Specs and Replacement

Type Designator: BU926

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2.5

Noise Figure, dB: -

Package: TOP3

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BU926 datasheet

 ..1. Size:215K  inchange semiconductor

 bu926.pdf pdf_icon

BU926

isc Silicon NPN Power Transistor BU926 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Low Saturation Voltage V = 1.5V (Max)@I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage , high-speed , power switching in inductive circuit. ABSOLUTE MAXIMUM RATIN... See More ⇒

Detailed specifications: BU921ZP, BU921ZPFI, BU921ZT, BU921ZTFI, BU922, BU922P, BU922PFI, BU922T, TIP42C, BU930, BU930P, BU930Z, BU930ZP, BU931, BU931P, BU931PFI, BU931R

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