BU926 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU926
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2.5
Noise Figure, dB: -
Package: TOP3
BU926 Transistor Equivalent Substitute - Cross-Reference Search
BU926 Datasheet (PDF)
..1. Size:215K inchange semiconductor
bu926.pdf
bu926.pdf
isc Silicon NPN Power Transistor BU926DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Low Saturation Voltage: V = 1.5V (Max)@I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage , high-speed , powerswitching in inductive circuit.ABSOLUTE MAXIMUM RATIN
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
