BU926 Datasheet and Replacement
Type Designator: BU926
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2.5
Noise Figure, dB: -
Package: TOP3
BU926 Substitution
BU926 Datasheet (PDF)
bu926.pdf

isc Silicon NPN Power Transistor BU926DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Low Saturation Voltage: V = 1.5V (Max)@I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage , high-speed , powerswitching in inductive circuit.ABSOLUTE MAXIMUM RATIN
Datasheet: BU921ZP , BU921ZPFI , BU921ZT , BU921ZTFI , BU922 , BU922P , BU922PFI , BU922T , TIP42C , BU930 , BU930P , BU930Z , BU930ZP , BU931 , BU931P , BU931PFI , BU931R .
Keywords - BU926 transistor datasheet
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