BU999 Specs and Replacement

Type Designator: BU999

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP3

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BU999 datasheet

 ..1. Size:214K  inchange semiconductor

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BU999

isc Silicon NPN Power Transistor BU999 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 140V(Min) CEO(SUS) High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: BU941T, BU941TFI, BU941Z, BU941ZP, BU941ZPFI, BU941ZSM, BU941ZT, BU941ZTFI, 2SC945, BUD44D, BUD44D2, BUD46, BUD46A, BUD47, BUD47A, BUD48, BUD48A

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