All Transistors. BU999 Datasheet

 

BU999 Datasheet and Replacement


   Type Designator: BU999
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TOP3
 

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BU999 Datasheet (PDF)

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BU999

isc Silicon NPN Power Transistor BU999DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 140V(Min)CEO(SUS)High Switching SpeedHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: BU941T , BU941TFI , BU941Z , BU941ZP , BU941ZPFI , BU941ZSM , BU941ZT , BU941ZTFI , 2SC2655 , BUD44D , BUD44D2 , BUD46 , BUD46A , BUD47 , BUD47A , BUD48 , BUD48A .

History: AD-BC857-B | CH817SGP | MRF1946 | P30 | 2SC6090LS

Keywords - BU999 transistor datasheet

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