BUF742 Specs and Replacement
Type Designator: BUF742
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
BUF742 Substitution
- BJT ⓘ Cross-Reference Search
BUF742 datasheet
isc Silicon NPN Power Transistor BUF742 DESCRIPTION Collector Emitter Breakdown Voltage V = 400V(Min.) (BR)CEO Collector Saturation Voltage V = 0.2V(Max) @ I = 0.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAX... See More ⇒
Detailed specifications: BUF646, BUF646A, BUF650, BUF653, BUF654, BUF660, BUF672, BUF725D, D882, BUF744, BUH100, BUH1015, BUH1215, BUH150, BUH2M20AP, BUH2M20P, BUH313
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