All Transistors. BUF742 Datasheet

 

BUF742 Datasheet and Replacement


   Type Designator: BUF742
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 11 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
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BUF742 Datasheet (PDF)

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BUF742

isc Silicon NPN Power Transistor BUF742DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min.)(BR)CEOCollector Saturation Voltage: V = 0.2V(Max) @ I = 0.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for electronic lamp ballast circuits switch-modepower supplies applications.ABSOLUTE MAX

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | DRC9143X | BDY12B | BF967 | KT208I | ED1602D | SFE245

Keywords - BUF742 transistor datasheet

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