BUF742 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUF742
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BUF742 Transistor Equivalent Substitute - Cross-Reference Search
BUF742 Datasheet (PDF)
..1. Size:216K inchange semiconductor
buf742.pdf
buf742.pdf
isc Silicon NPN Power Transistor BUF742DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min.)(BR)CEOCollector Saturation Voltage: V = 0.2V(Max) @ I = 0.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for electronic lamp ballast circuits switch-modepower supplies applications.ABSOLUTE MAX
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
