All Transistors. BUH2M20P Datasheet

 

BUH2M20P Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUH2M20P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 2000 V
   Maximum Collector-Emitter Voltage |Vce|: 900 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220

 BUH2M20P Transistor Equivalent Substitute - Cross-Reference Search

   

BUH2M20P Datasheet (PDF)

 7.1. Size:67K  st
 buh2m20.pdf

BUH2M20P BUH2M20P

BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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