All Transistors. BUH415DXI Datasheet

 

BUH415DXI Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUH415DXI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: ISOWATT218

 BUH415DXI Transistor Equivalent Substitute - Cross-Reference Search

   

BUH415DXI Datasheet (PDF)

 9.1. Size:213K  inchange semiconductor
 buh417d.pdf

BUH415DXI BUH415DXI

isc Silicon NPN Power Transistors BUH417DDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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