All Transistors. BUH415DXI Datasheet

 

BUH415DXI Datasheet and Replacement


   Type Designator: BUH415DXI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: ISOWATT218
 

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BUH415DXI Datasheet (PDF)

 9.1. Size:213K  inchange semiconductor
 buh417d.pdf pdf_icon

BUH415DXI

isc Silicon NPN Power Transistors BUH417DDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: BUH150 , BUH2M20AP , BUH2M20P , BUH313 , BUH313D , BUH315 , BUH315D , BUH315DXI , BC327 , BUH417 , BUH50 , BUH51 , BUH513 , BUH515 , BUH515D , BUH515DXI , BUH515XI .

History: BF422W3

Keywords - BUH415DXI transistor datasheet

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