BUH417 Specs and Replacement
Type Designator: BUH417
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: ISOWATT218
BUH417 Substitution
- BJT ⓘ Cross-Reference Search
BUH417 datasheet
isc Silicon NPN Power Transistors BUH417D DESCRIPTION High Switching Speed High Voltage Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
Detailed specifications: BUH2M20AP, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI, A733, BUH50, BUH51, BUH513, BUH515, BUH515D, BUH515DXI, BUH515XI, BUH517
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