All Transistors. BUH417 Datasheet

 

BUH417 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUH417
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 55 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: ISOWATT218

 BUH417 Transistor Equivalent Substitute - Cross-Reference Search

   

BUH417 Datasheet (PDF)

 0.1. Size:213K  inchange semiconductor
 buh417d.pdf

BUH417 BUH417

isc Silicon NPN Power Transistors BUH417DDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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