All Transistors. BUL52B Datasheet

 

BUL52B Datasheet, Equivalent, Cross Reference Search

Type Designator: BUL52B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

BUL52B Transistor Equivalent Substitute - Cross-Reference Search

 

BUL52B Datasheet (PDF)

1.1. bul52bsmd.pdf Size:10K _update

BUL52B

BUL52BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.2. bul52b.pdf Size:82K _jmnic

BUL52B
BUL52B

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION · ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 1.3. bul52b.pdf Size:118K _inchange_semiconductor

BUL52B
BUL52B

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BUL52B DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage Ў¤ Fast switching Ў¤ High energy rating APPLICATIONS Ў¤ Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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