All Transistors. BUR20 Datasheet

 

BUR20 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUR20
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 BUR20 Transistor Equivalent Substitute - Cross-Reference Search

   

BUR20 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
 bur20.pdf

BUR20 BUR20

isc Silicon NPN Power Transistor BUR20DESCRIPTIONHigh DC Current Gain-h =10(Min)@I = 50AFE CLow Saturation Voltage-V )= 1.0V(Max)@ I = 25ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power amplifier and switchingcircuits applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top