BUR20 Specs and Replacement
Type Designator: BUR20
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUR20 Substitution
- BJT ⓘ Cross-Reference Search
BUR20 datasheet
isc Silicon NPN Power Transistor BUR20 DESCRIPTION High DC Current Gain-h =10(Min)@I = 50A FE C Low Saturation Voltage- V )= 1.0V(Max)@ I = 25A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Detailed specifications: BUP59, BUPD1520, BUR10, BUR11, BUR12, BUR13, BUR14, BUR15, 13005, BUR21, BUR22, BUR23, BUR24, BUR30, BUR31, BUR32, BUR33
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