BUR22 Specs and Replacement
Type Designator: BUR22
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
BUR22 Substitution
- BJT ⓘ Cross-Reference Search
BUR22 datasheet
isc Silicon NPN Power Transistor BUR22 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V (Max.) @I = 20A CE(sat) C High Switching Speed High DC Current Gain- h = 10(Min.) @I = 20A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: BUR10, BUR11, BUR12, BUR13, BUR14, BUR15, BUR20, BUR21, 2N4401, BUR23, BUR24, BUR30, BUR31, BUR32, BUR33, BUR34, BUR50
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