All Transistors. BUS11B Datasheet

 

BUS11B Datasheet and Replacement


   Type Designator: BUS11B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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BUS11B Datasheet (PDF)

 9.1. Size:77K  inchange semiconductor
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BUS11B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BSW13R | 2PB602AR | SM2165 | FMMT591DCSM | CC327-16 | 2SB966 | IDD234

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