BUS11B Specs and Replacement

Type Designator: BUS11B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

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BUS11B datasheet

 9.1. Size:77K  inchange semiconductor

 bus11 a.pdf pdf_icon

BUS11B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER ... See More ⇒

Detailed specifications: BUR61, BUR62, BUR806, BUR807, BUS11, BUS11-4, BUS11-6, BUS11A, BD222, BUS12, BUS12-4, BUS12-6, BUS12A, BUS12B, BUS13, BUS13-5, BUS13-6

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