All Transistors. BUS11B Datasheet

 

BUS11B Datasheet and Replacement


   Type Designator: BUS11B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

 BUS11B Substitution

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BUS11B Datasheet (PDF)

 9.1. Size:77K  inchange semiconductor
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BUS11B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: BUR61 , BUR62 , BUR806 , BUR807 , BUS11 , BUS11-4 , BUS11-6 , BUS11A , 2SC5200 , BUS12 , BUS12-4 , BUS12-6 , BUS12A , BUS12B , BUS13 , BUS13-5 , BUS13-6 .

History: KTC4521F | 2N2078A | 2SC3210 | 2SCR554P | 2SD882-Y | 2N5337X | 2SA1721R

Keywords - BUS11B transistor datasheet

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