BUS98 Datasheet. Specs and Replacement

Type Designator: BUS98  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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BUS98 datasheet

 0.1. Size:324K  motorola

 bus98rev.pdf pdf_icon

BUS98

Order this document MOTOROLA by BUS98/D SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Designer's Data Sheet SWITCHMODE Series 30 AMPERES NPN Silicon Power Transistors NPN SILICON The BUS98 and BUS98A transistors are designed for high voltage, high speed, POWER TRANSISTORS power switching in inductive circuits where fall time is critical. They are particularly 400 AND 450 VOLTS ... See More ⇒

 0.2. Size:208K  inchange semiconductor

 bus98a.pdf pdf_icon

BUS98

isc Silicon NPN Power Transistor BUS98A DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode... See More ⇒

Detailed specifications: BUS48A, BUS48AP, BUS48P, BUS50, BUS51, BUS52, BUS97, BUS97A, A1013, BUS98A, BUT100, BUT102, BUT11, BUT11-5, BUT11-6, BUT11-7, BUT11A

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