BUT34 Datasheet. Specs and Replacement

Type Designator: BUT34  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BUT34 datasheet

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BUT34

Order this document MOTOROLA by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTOR 850 VOLTS Transistors with Base-Emitter 250 WATTS Speedup Diode The BUT34 Darlington transistor is designed for high voltage, high speed, power switching in inductive circuits wh... See More ⇒

Detailed specifications: BUT22BF, BUT22C, BUT22CF, BUT230V, BUT232V, BUT30, BUT32, BUT33, 2N3055, BUT35, BUT36, BUT46, BUT46A, BUT50P, BUT51P, BUT54, BUT55

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