BUT54 Datasheet. Specs and Replacement

Type Designator: BUT54  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 430 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

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BUT54 datasheet

 ..1. Size:264K  inchange semiconductor

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BUT54

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT54 DESCRIPTION High Voltage High Speed Switching High Power Dissipation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V Collector-Emitter... See More ⇒

Detailed specifications: BUT33, BUT34, BUT35, BUT36, BUT46, BUT46A, BUT50P, BUT51P, TIP122, BUT55, BUT56, BUT56A, BUT56A-668, BUT56T, BUT57, BUT57I, BUT60

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