BUT56A-668 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT56A-668
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TOP3
BUT56A-668 Transistor Equivalent Substitute - Cross-Reference Search
BUT56A-668 Datasheet (PDF)
but56 but56a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
but56af.pdf
isc Silicon NPN Power Transistor BUT56AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingHigh Power DissipationWith TO-220Fa Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply applications.ABSOLUTE MAXIM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
