All Transistors. BUT76 Datasheet

 

BUT76 Datasheet and Replacement


   Type Designator: BUT76
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 110 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 3.2
   Noise Figure, dB: -
   Package: TO220
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BUT76 Datasheet (PDF)

 ..1. Size:119K  inchange semiconductor
 but76 but76a.pdf pdf_icon

BUT76

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply Motor control and relay driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25)

 0.1. Size:101K  inchange semiconductor
 but76af.pdf pdf_icon

BUT76

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT76AF DESCRIPTION High Voltage High Speed Switching High Power Dissipation APPLICATIONS Designed for switching mode power supply, inverters, motor control and relay driver applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage 10

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: FHT5551-ME | SGSD110

Keywords - BUT76 transistor datasheet

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