BUT76 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT76
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 110 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 3.2
Noise Figure, dB: -
Package: TO220
BUT76 Transistor Equivalent Substitute - Cross-Reference Search
BUT76 Datasheet (PDF)
but76 but76a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply Motor control and relay driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25)
but76af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT76AF DESCRIPTION High Voltage High Speed Switching High Power Dissipation APPLICATIONS Designed for switching mode power supply, inverters, motor control and relay driver applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage 10
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ECG192A
