BUT93 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT93
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
BUT93 Transistor Equivalent Substitute - Cross-Reference Search
BUT93 Datasheet (PDF)
..1. Size:262K inchange semiconductor
but93.pdf
but93.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT93 DESCRIPTION High Voltage High Speed Switching High Power Dissipation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage 600 V VCEO Collector-Em
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
