All Transistors. BUV10N Datasheet

 

BUV10N Datasheet and Replacement


   Type Designator: BUV10N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BUV10N Datasheet (PDF)

 9.1. Size:236K  inchange semiconductor
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BUV10N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION High Switching Speed High Current Capability APPLICATIONS Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 VVBE= -1.5V Coll

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N3904G | TTC0002 | BSX50-10 | BDY57A | BC857CQ | BSR32 | BTN3904A3

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