BUV10N Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV10N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUV10N Transistor Equivalent Substitute - Cross-Reference Search
BUV10N Datasheet (PDF)
9.1. Size:236K inchange semiconductor
buv10.pdf
buv10.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION High Switching Speed High Current Capability APPLICATIONS Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 VVBE= -1.5V Coll
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
