BUV10N Specs and Replacement

Type Designator: BUV10N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BUV10N datasheet

 9.1. Size:236K  inchange semiconductor

 buv10.pdf pdf_icon

BUV10N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION High Switching Speed High Current Capability APPLICATIONS Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 V VBE= -1.5V Coll... See More ⇒

Detailed specifications: BUT72I, BUT76, BUT76A, BUT90, BUT91, BUT92, BUT92A, BUT93, 2SC1815, BUV11, BUV11CECC, BUV11N, BUV12, BUV18, BUV18X, BUV19, BUV1O

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