All Transistors. BUV11CECC Datasheet

 

BUV11CECC Datasheet and Replacement


   Type Designator: BUV11CECC
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BUV11CECC Datasheet (PDF)

 9.1. Size:138K  motorola
 buv11rev.pdf pdf_icon

BUV11CECC

Order this documentMOTOROLAby BUV11/DSEMICONDUCTOR TECHNICAL DATABUV11SWITCHMODE Series20 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A150 WATTS Very fast switc

 9.2. Size:77K  inchange semiconductor
 buv11.pdf pdf_icon

BUV11CECC

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER V

Datasheet: BUT76A , BUT90 , BUT91 , BUT92 , BUT92A , BUT93 , BUV10N , BUV11 , TSB145 , BUV11N , BUV12 , BUV18 , BUV18X , BUV19 , BUV1O , BUV20 , BUV21 .

History: 2SC999A | 2N5059S | 2SD232A | 2N1056 | UN9217R | KT8107D2 | ECG2306

Keywords - BUV11CECC transistor datasheet

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