BUV25 Specs and Replacement

Type Designator: BUV25

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BUV25 Substitution

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BUV25 datasheet

 ..1. Size:208K  inchange semiconductor

 buv25.pdf pdf_icon

BUV25

isc Silicon NPN Power Transistor BUV25 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V (Max.)@I = 4A CE(sat) C High Power Dissipation Collector-Emitter Sustaining Voltage- V = 500V (Min.) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power switching applications in military and indus... See More ⇒

Detailed specifications: BUV19, BUV1O, BUV20, BUV21, BUV21N, BUV22, BUV23, BUV24, SS8050, BUV26, BUV26A, BUV26F, BUV26FI, BUV27, BUV27A, BUV27F, BUV27FI

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