All Transistors. BUV25 Datasheet

 

BUV25 Datasheet and Replacement


   Type Designator: BUV25
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BUV25 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
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BUV25

isc Silicon NPN Power Transistor BUV25DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.)@I = 4ACE(sat) CHigh Power DissipationCollector-Emitter Sustaining Voltage-: V = 500V (Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power switching applications in militaryand indus

Datasheet: BUV19 , BUV1O , BUV20 , BUV21 , BUV21N , BUV22 , BUV23 , BUV24 , A1013 , BUV26 , BUV26A , BUV26F , BUV26FI , BUV27 , BUV27A , BUV27F , BUV27FI .

History: 2N2100A | 2N1098 | TP930R

Keywords - BUV25 transistor datasheet

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