All Transistors. BUV39 Datasheet

 

BUV39 Datasheet and Replacement


   Type Designator: BUV39
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
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BUV39 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
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BUV39

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 7.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 160 VVB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NSBC114YPDXV6T1G | MRF5812 | 2N2569 | 2SA1592S | MJE13007X8 | MCH3245 | KMBT2222A

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