All Transistors. BUV39 Datasheet

 

BUV39 Datasheet and Replacement


   Type Designator: BUV39
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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BUV39 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
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BUV39

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 7.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 160 VVB

Datasheet: BUV296AV , BUV298AV , BUV298CV , BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , D882P , BUV40 , BUV406 , BUV41 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI .

History: 2N5630 | 2N1250-1 | 2SC4960 | 2SA1592S | 2N2809 | BDX54S | 2STX2220

Keywords - BUV39 transistor datasheet

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