All Transistors. BUV39 Datasheet

 

BUV39 Datasheet, Equivalent, Cross Reference Search

Type Designator: BUV39

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

BUV39 Transistor Equivalent Substitute - Cross-Reference Search

 

BUV39 Datasheet (PDF)

1.1. buv39.pdf Size:242K _inchange_semiconductor

BUV39
BUV39

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 160 V VBE=-1.

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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