BUV39 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV39
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
BUV39 Transistor Equivalent Substitute - Cross-Reference Search
BUV39 Datasheet (PDF)
1.1. buv39.pdf 
Size:242K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 7.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 160 V VBE=-1.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
