All Transistors. BUV406 Datasheet

 

BUV406 Datasheet and Replacement


   Type Designator: BUV406
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

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BUV406 Datasheet (PDF)

 9.1. Size:204K  inchange semiconductor
 buv40.pdf pdf_icon

BUV406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 250 VVB

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: N0202S | KSB707R

Keywords - BUV406 transistor datasheet

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