BUV406 Datasheet. Specs and Replacement

Type Designator: BUV406  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

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BUV406 datasheet

 9.1. Size:204K  inchange semiconductor

 buv40.pdf pdf_icon

BUV406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.8V (Max.) @IC= 5.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 250 V VB... See More ⇒

Detailed specifications: BUV298CV, BUV298V, BUV30, BUV36, BUV36A, BUV37, BUV39, BUV40, BC556, BUV41, BUV42, BUV42A, BUV46, BUV46A, BUV46AFI, BUV46FI, BUV47

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