BUV41 Specs and Replacement
Type Designator: BUV41
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUV41 Substitution
- BJT ⓘ Cross-Reference Search
BUV41 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.8V (Max.) @IC= 3A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 300 V VBE=... See More ⇒
Detailed specifications: BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , BUV39 , BUV40 , BUV406 , BC639 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI , BUV46FI , BUV47 , BUV47A .
Keywords - BUV41 pdf specs
BUV41 cross reference
BUV41 equivalent finder
BUV41 pdf lookup
BUV41 substitution
BUV41 replacement
History: SMA4032 | 2N5941
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679
