All Transistors. BUV41 Datasheet

 

BUV41 Datasheet and Replacement


   Type Designator: BUV41
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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BUV41 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
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BUV41

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 3A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 300 VVBE=

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3036 | KTC2553 | 2N3598 | KSB798 | MPS3905R | D43CJ6 | BUL147F

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