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BUV41 Specs and Replacement

Type Designator: BUV41

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUV41 datasheet

 ..1. Size:242K  inchange semiconductor

buv41.pdf pdf_icon

BUV41

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.8V (Max.) @IC= 3A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 300 V VBE=... See More ⇒

Detailed specifications: BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , BUV39 , BUV40 , BUV406 , BC639 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI , BUV46FI , BUV47 , BUV47A .

History: SMA4032 | 2N5941

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