BUV41 Datasheet and Replacement
Type Designator: BUV41
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV41 Substitution
BUV41 Datasheet (PDF)
buv41.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 3A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 300 VVBE=
Datasheet: BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , BUV39 , BUV40 , BUV406 , 2SA1015 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI , BUV46FI , BUV47 , BUV47A .
History: 2T7537A | 2T7532C | SGS112 | BD347 | 2T7535B | BUV48A | 2T7637
Keywords - BUV41 transistor datasheet
BUV41 cross reference
BUV41 equivalent finder
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History: 2T7537A | 2T7532C | SGS112 | BD347 | 2T7535B | BUV48A | 2T7637



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