BUV48AF Specs and Replacement
Type Designator: BUV48AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TOP3
BUV48AF Substitution
- BJT ⓘ Cross-Reference Search
BUV48AF datasheet
isc Silicon NPN Power Transistor BUV48AFI DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated switc... See More ⇒
BUV48A High voltage fast switching NPN power transistor Features High current capability Fast switching speed Applications Switching mode power supplies 3 Flyback and forward single transistor low power 2 1 converter TO-247 Description The device is a multiepitaxial mesa NPN Figure 1. Internal schematic diagram transistor mounted in TO-247 plastic package. I... See More ⇒
Detailed specifications: BUV47AF, BUV47AFI, BUV47AP, BUV47B, BUV47FI, BUV47I, BUV48, BUV48A, D667, BUV48AFI, BUV48B, BUV48C, BUV48CFI, BUV48CI, BUV48FI, BUV48I, BUV48T
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