BUV48AF Datasheet and Replacement
Type Designator: BUV48AF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TOP3
BUV48AF Datasheet (PDF)
buv48afi.pdf

isc Silicon NPN Power Transistor BUV48AFIDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated switc
buv48a.pdf

BUV48A High voltage fast switching NPN power transistorFeatures High current capability Fast switching speedApplications Switching mode power supplies3 Flyback and forward single transistor low power 21converterTO-247DescriptionThe device is a multiepitaxial mesa NPN Figure 1. Internal schematic diagramtransistor mounted in TO-247 plastic package. I
buv48a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV48A DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode applications such as:
Datasheet: BUV47AF , BUV47AFI , BUV47AP , BUV47B , BUV47FI , BUV47I , BUV48 , BUV48A , S9018 , BUV48AFI , BUV48B , BUV48C , BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T .
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History: BD796 | 3DG2884



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