All Transistors. BUV48CI Datasheet

 

BUV48CI Datasheet and Replacement


   Type Designator: BUV48CI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TOP3
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BUV48CI Datasheet (PDF)

 8.1. Size:311K  st
 bux48b bux48c buv48b buv48c buv48bfi buv48cfi.pdf pdf_icon

BUV48CI

 8.2. Size:214K  inchange semiconductor
 buv48cfi.pdf pdf_icon

BUV48CI

isc Silicon NPN Power Transistor BUV48CFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

 8.3. Size:213K  inchange semiconductor
 buv48c.pdf pdf_icon

BUV48CI

isc Silicon NPN Power Transistor BUV48CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

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