BUV48CI Specs and Replacement

Type Designator: BUV48CI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TOP3

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BUV48CI datasheet

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BUV48CI

isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25... See More ⇒

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Detailed specifications: BUV47I, BUV48, BUV48A, BUV48AF, BUV48AFI, BUV48B, BUV48C, BUV48CFI, 2SC5200, BUV48FI, BUV48I, BUV48T, BUV50, BUV51, BUV52, BUV52A, BUV54

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