All Transistors. BUV51 Datasheet

 

BUV51 Datasheet and Replacement


   Type Designator: BUV51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUV51 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
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BUV51

isc Silicon NPN Power Transistor BUV51DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 5ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: BUV48B , BUV48C , BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T , BUV50 , AC125 , BUV52 , BUV52A , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 , BUV61 .

History: 2N1632 | ET408 | DTC144TET1G | BD175-10 | MJE241 | 2SB1148 | KTB817B

Keywords - BUV51 transistor datasheet

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