All Transistors. BUV51 Datasheet

 

BUV51 Datasheet and Replacement


   Type Designator: BUV51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search

   

BUV51 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
 buv51.pdf pdf_icon

BUV51

isc Silicon NPN Power Transistor BUV51DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 5ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DRA3A15E | DTL8045 | BD612 | ZTX311L | 2N1700 | MPQ5130 | BLX20

Keywords - BUV51 transistor datasheet

 BUV51 cross reference
 BUV51 equivalent finder
 BUV51 lookup
 BUV51 substitution
 BUV51 replacement

 

 
Back to Top

 


 
.