BUV56 Specs and Replacement

Type Designator: BUV56

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

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BUV56 datasheet

 ..1. Size:209K  inchange semiconductor

 buv56.pdf pdf_icon

BUV56

isc Silicon NPN Power Transistor BUV56 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch mode power supply, UPS, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

Detailed specifications: BUV48I, BUV48T, BUV50, BUV51, BUV52, BUV52A, BUV54, BUV54A, BC548, BUV56A, BUV60, BUV61, BUV62, BUV62A, BUV63, BUV66, BUV66A

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