All Transistors. BUV56 Datasheet

 

BUV56 Datasheet and Replacement


   Type Designator: BUV56
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

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BUV56 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
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BUV56

isc Silicon NPN Power Transistor BUV56DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch mode power supply, UPS, DC and ACmotor control applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE U

Datasheet: BUV48I , BUV48T , BUV50 , BUV51 , BUV52 , BUV52A , BUV54 , BUV54A , 2N3904 , BUV56A , BUV60 , BUV61 , BUV62 , BUV62A , BUV63 , BUV66 , BUV66A .

History: 2N914-51 | PTB20175 | 2N2092 | 2N5096 | 2N6339

Keywords - BUV56 transistor datasheet

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