BUV62 Datasheet. Specs and Replacement
Type Designator: BUV62 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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BUV62 datasheet
isc Silicon NPN Power Transistor BUV62A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BUV52, BUV52A, BUV54, BUV54A, BUV56, BUV56A, BUV60, BUV61, S8050, BUV62A, BUV63, BUV66, BUV66A, BUV70, BUV70F, BUV71, BUV71F
Keywords - BUV62 pdf specs
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BJT Parameters and How They Relate
History: KT361Zh2 | NPS2712 | ET6062 | BD358 | UML1N | KT837F1-IM | KT841A
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