BUV62 Datasheet and Replacement
Type Designator: BUV62
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV62 Transistor Equivalent Substitute - Cross-Reference Search
BUV62 Datasheet (PDF)
buv62a.pdf
isc Silicon NPN Power Transistor BUV62A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
Datasheet: BUV52 , BUV52A , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 , BUV61 , S8050 , BUV62A , BUV63 , BUV66 , BUV66A , BUV70 , BUV70F , BUV71 , BUV71F .
History: BUT102 | GSTU6035 | K2107A
Keywords - BUV62 transistor datasheet
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History: BUT102 | GSTU6035 | K2107A
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