BUV62 Datasheet. Specs and Replacement

Type Designator: BUV62  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUV62 datasheet

 0.1. Size:204K  inchange semiconductor

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BUV62

isc Silicon NPN Power Transistor BUV62A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: BUV52, BUV52A, BUV54, BUV54A, BUV56, BUV56A, BUV60, BUV61, S8050, BUV62A, BUV63, BUV66, BUV66A, BUV70, BUV70F, BUV71, BUV71F

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